TID - Category 3 - Electronics

CATEGORY 3-ELECTRONICS

3A SYSTEMS, EQUIPMENT AND COMPONENTS

Notes:

1. The control status of equipment and components described in 3A001 or 3A002, other than those described in 3A001(a)(3) to 3A001(a)(10) or 3A001(a)(12), which are specially designed for or which have the same functional characteristics as other equipment is determined by the control status of the other equipment.

2. The control status of integrated circuits described in 3A001(a)(3) to 3A001(a)(9) or 3A001(a)(12) which are unalterably programmed or designed for a specific function for another equipment is determined by the control status of the other equipment.

N.B.:

When the manufacturer or applicant cannot determine the control status of the other equipment, the control status of the integrated circuits is determined in 3A001(a)(3) to 3A001(a)(9) and 3A001(a)(12).

(L.N. 226 of 2009)

3A001 Electronic components, as follows:

(a) General purpose integrated circuits, as follows:

Notes:

1. The control status of wafers (finished or unfinished), in which the function has been determined, is to be evaluated against the parameters of 3A001(a).

2. Integrated circuits include the following types:

"Monolithic integrated circuits";

"Hybrid integrated circuits";

"Multichip integrated circuits";

"Film type integrated circuits", including silicon-on-sapphire integrated circuits;

"Optical integrated circuits".

(1) Integrated circuits, designed or rated as radiation hardened to withstand any of the following:

(a) a total dose of 5 x 10³ Gy (Si), or higher; (L.N. 65 of 2004)

(b) a dose rate upset of 5 x 10⁶ Gy (Si)/s or higher; or (L.N. 65 of 2004)

(c) a fluence (integrated flux) of neutrons (1 MeV equivalent) of 5 × 10¹³ n/cm² or higher on silicon, or its equivalent for other materials;

Note:

3A001(a)(1)(c) does not apply to Metal Insulator Semiconductors (MIS). (L.N. 65 of 2004)

(2) "Microprocessor microcircuits", "microcomputer microcircuits", microcontroller microcircuits, storage integrated circuits manufactured from a compound semiconductor, analogue-to-digital converters, digital-to-analogue converters, electro-optical or "optical integrated circuits" designed for "signal processing", field programmable logic devices, custom integrated circuits for which either the function is unknown or the control status of the equipment in which the integrated circuit will be used is unknown, Fast Fourier Transform (FFT) processors, electrical erasable programmable read-only memories (EEPROMs), flash memories or static random-access memories (SRAMs), having any of the following: (L.N. 132 of 2001; L.N. 254 of 2008)

(a)    Rated for operation at an ambient temperature above 398 K (125⁰C);

(b)    Rated for operation at an ambient temperature below 218 K (-55⁰C); or

(c)    Rated for operation over the entire ambient temperature range from 218 K (-55⁰C) to 398 K (125⁰C);

Note:

3A001(a)(2) does not apply to integrated circuits for civil automobiles or railway train applications.

(3) "Microprocessor microcircuits", "microcomputer microcircuits" and microcontroller microcircuits, manufactured from a compound semiconductor and operating at a clock frequency exceeding 40 MHz;

Note:

3A001(a)(3) includes digital signal processors, digital array processors and digital coprocessors. (L.N. 95 of 2006)

(4) Storage integrated circuits manufactured from a compound semiconductor;

(5) Analogue-to-digital and digital-to-analogue converter integrated circuits, as follows:

(a)    Analogue-to-digital converters having any of the following:

(1)    A resolution of 8 bit or more, but less than 10 bit, with an output rate greater than 500 million words per second;

(2)    A resolution of 10 bit or more, but less than 12 bit, with an output rate greater than 200 million words per second;

(3)    A resolution of 12 bit with an output rate greater than 105 million words per second;

(4)    A resolution of more than 12 bit but equal to or less than 14 bit with an output rate greater than 10 million words per second; or

(5)    A resolution of more than 14 bit with an output rate greater than 2.5 million words per second; (L.N. 95 of 2006; L.N. 254 of 2008)

(b)    Digital-to-analogue converters with a resolution of 12 bit or more, and a "settling time" of less than 10 ns;

Technical Notes:

1.      A resolution of n bit corresponds to a quantisation of 2ⁿ levels.

2.      The number of bits in the output word is equal to the resolution of the analogue-to-digital converter.

3.      The output rate is the maximum output rate of the converter, regardless of architecture or oversampling. Vendors may also refer to the output rate as sampling rate, conversion rate or throughput rate. It is often specified in megahertz (MHz) or mega samples per second (MSPS).

4.    For the purpose of measuring output rate, one output word per second is equivalent to one Hertz or one sample per second. (L.N. 95 of 2006)

(6) Electro-optical and "optical integrated circuits" designed for "signal processing" having all of the following:

(a) One or more than one internal "laser" diode;

(b) One or more than one internal light detecting element; and

(7) 'Field programmable logic devices' having any of the following:

(a)    A maximum number of digital input/output greater than 200;

(b)    A system gate count of greater than 230000;

Note:

3A001(a)(7) includes:

-Simple Programmable Logic Devices (SPLDs)

-Complex Programmable Logic Devices (CPLDs)

-Field Programmable Gate Arrays (FPGAs)

-Field Programmable Logic Arrays (FPLAs)

-Field Programmable Interconnects (FPICs)

Technical Notes:

1.     'Field programmable logic devices' are also known as field programmable gate or field programmable logic arrays.

2.     Maximum number of digital input/output in 3A001(a)(7)(a) is also referred to as the maximum user input/output or maximum available input/output, whether the integrated circuit is packaged or bare die. (L.N. 226 of 2009)

(8) Deleted; (L.N. 132 of 2001)

(9) Neural network integrated circuits;

(10) Custom integrated circuits for which the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following:

(a) More than 1500 terminals; (L.N. 132 of 2001; L.N. 226 of 2009)

(b) A typical "basic gate propagation delay time" of less than 0.02 ns; or (L.N. 132 of 2001; L.N. 226 of 2009)

(11) Digital integrated circuits, other than those described in 3A001(a)(3) to 3A001(a)(10) and 3A001(a)(12), based upon any compound semiconductor and having any of the following:

(a) An equivalent gate count of more than 3000 (2 input gates); or (L.N. 132 of 2001)

(b) A toggle frequency exceeding 1.2 GHz;

(12) Fast Fourier Transform (FFT) processors having a rated execution time for an N-point complex FFT of less than (N log₂ N)/20480 ms, where N is the number of points;

Technical Note:

When N is equal to 1024 points, the formula in 3A001(a)(12) gives an execution time of 500 ms. (L.N. 132 of 2001)

(b) Microwave or millimetre wave components, as follows:

(1) Electronic vacuum tubes and cathodes, as follows:

Notes:

1. 3A001(b)(1) does not control tubes designed or rated for operation in any frequency band which meets both of the following characteristics:

(a) Does not exceed 31.8 GHz; and

(b) Is "allocated by the ITU" for radiocommunications services, but not for radio-determination.

2. 3A001(b)(1) does not control non-"space-qualified" tubes which meet both of the following characteristics: (L.N. 45 of 2010)

(a) An average output power equal to or less than 50 W; and

(b) Designed or rated for operation in any frequency band which meets both of the following characteristics:

(1) Exceeds 31.8 GHz but does not exceed 43.5 GHz; and

(2) Is "allocated by the ITU" for radiocommunications services, but not for radio-determination. (L.N. 65 of 2004)

(a) Travelling wave tubes, pulsed or continuous wave, as follows:

(1) Operating at frequencies exceeding 31.8 GHz; (L.N. 132 of 2001; L.N. 65 of 2004)

(2) Having a cathode heater element with a turn on time to rated RF power of less than 3 seconds;

(3) Coupled cavity tubes, or derivatives thereof, with an "fractional bandwidth" of more than 7% or a peak power exceeding 2.5 kW; (L.N. 132 of 2001)

(4) Helix tubes, or derivatives thereof, with any of the following characteristics:

(a) An "instantaneous bandwidth" of more than one octave, and average power (expressed in kW) times frequency (expressed in GHz) of more than 0.5;

(b) An "instantaneous bandwidth" of one octave or less, and average power (expressed in kW) times frequency (expressed in GHz) of more than 1; or (L.N. 254 of 2008)

(b) Crossed-field amplifier tubes with a gain of more than 17 dB;

(c) Impregnated cathodes designed for electronic tubes producing a continuous emission current density at rated operating conditions exceeding 5 A/cm²; (L.N. 132 of 2001)

(2) Microwave monolithic integrated circuits (MMIC) power amplifiers having any of the following:

(a) Rated for operation at frequencies exceeding 3.2 GHz up to and including 6 GHz and with an average output power greater than 4 W (36 dBm) with a "fractional bandwidth" greater than 15%;

(b) Rated for operation at frequencies exceeding 6 GHz up to and including 16 GHz and with an average output power greater than 1 W (30 dBm) with a "fractional bandwidth" greater than 10%;

(c) Rated for operation at frequencies exceeding 16 GHz up to and including 31.8 GHz and with an average output power greater than 0.8 W (29 dBm) with a "fractional bandwidth" greater than 10%;

(d) Rated for operation at frequencies exceeding 31.8 GHz up to and including 37.5 GHz;

(e) Rated for operation at frequencies exceeding 37.5 GHz up to and including 43.5 GHz and with an average output power greater than 0.25 W (24 dBm) with a "fractional bandwidth" greater than 10%; or

(f) Rated for operation at frequencies exceeding 43.5 GHz;

Notes:

1. 3A001(b)(2) does not control broadcast satellite equipment designed or rated to operate in the frequency range of 40.5 to 42.5 GHz.

2. The control status of the MMIC whose rated operating frequency includes frequencies listed in more than one frequency range, as defined by 3A001(b)(2)(a) to 3A001(b)(2)(f), is determined by the lowest average output power control threshold. (L.N. 95 of 2006)

3. Notes 1 and 2 to sub-category 3A of Category 3 mean that 3A001(b)(2) does not control MMICs if they are specially designed for other applications, e.g., telecommunications, radar, automobiles. (L.N. 65 of 2004)

(3) Discrete microwave transistors having any of the following: (L.N. 95 of 2006)

(a) Rated for operation at frequencies exceeding 3.2 GHz up to and including 6 GHz and having an average output power greater than 60 W (47.8 dBm);

(b) Rated for operation at frequencies exceeding 6 GHz up to and including 31.8 GHz and having an average output power greater than 20 W (43 dBm);

(c) Rated for operation at frequencies exceeding 31.8 GHz up to and including 37.5 GHz and having an average output power greater than 0.5 W (27 dBm);

(d) Rated for operation at frequencies exceeding 37.5 GHz up to and including 43.5 GHz and having an average output power greater than 1 W (30 dBm); or

(e) Rated for operation at frequencies exceeding 43.5 GHz;

Note:

The control status of a transistor whose rated operating frequency includes frequencies listed in more than one frequency range, as defined by 3A001(b)(3)(a) to 3A001(b)(3)(e), is determined by the lowest average output power control threshold. (L.N. 95 of 2006)

(4) Microwave solid state amplifiers and microwave assemblies/modules containing microwave solid state amplifiers having any of the following: (L.N. 254 of 2008)

(a) Rated for operation at frequencies exceeding 3.2 GHz up to and including 6 GHz and with an average output power greater than 60 W (47.8 dBm) with a "fractional bandwidth" greater than 15%;

(b) Rated for operation at frequencies exceeding 6 GHz up to and including 31.8 GHz and with an average output power greater than 15 W (42 dBm) with a "fractional bandwidth" greater than 10%;

(d) Rated for operation at frequencies exceeding 37.5 GHz up to and including 43.5 GHz and with an average output power greater than 1 W (30 dBm) with a "fractional bandwidth" greater than 10%;

(e) Rated for operation at frequencies exceeding 43.5 GHz; or

(f) Rated for operation at frequencies above 3 GHz and having all of the following:

(1) An average output power (in watts), P, greater than 150 divided by the maximum operating frequency (in GHz) squared [P>150 W*GHz²/fGHz²];

(2) A "fractional bandwidth" of 5% or greater; and

(3) Any two sides perpendicular to one another with length d (in cm) equal to or less than 15 divided by the lowest operating frequency in GHz [d<15 cm*GHz/fGHz];

Technical Note:

3.2 GHz should be used as the lowest operating frequency (f_GHz) in the formula in 3A001(b)(4)(f)(3), for amplifiers that have a rated operation range extending downward to 3.2 GHz and below [d<15cm*GHz/3.2 GHz]. (L.N. 95 of 2006)

N.B.:

MMIC power amplifiers should be evaluated against the criteria in 3A001(b)(2).

Notes:

1. 3A001(b)(4) does not control broadcast satellite equipment designed or rated to operate in the frequency range of 40.5 to 42.5 GHz.

2. The control status of an item whose rated operating frequency includes frequencies listed in more than one frequency range, as defined by 3A001(b)(4)(a) to 3A001(b)(4)(e), is determined by the lowest average output power control threshold. (L.N. 95 of 2006)

(5) Electronically or magnetically tunable band-pass or band-stop filters having more than 5 tunable resonators capable of tuning across a 1.5:1 frequency band (fmax/fmin) in less than 10 ms having any of the following:

(a) A band-pass bandwidth of more than 0.5% of centre frequency; or

(b) A band-stop bandwidth of less than 0.5% of centre frequency;

(6) Deleted; (L.N. 65 of 2004)

(7) Converters and harmonic mixers, designed to extend the frequency range of equipment described in 3A002(c), 3A002(d), 3A002(e) or 3A002(f) beyond the limits respectively stated in those sub-items; (L.N. 254 of 2008)

(8) Microwave power amplifiers containing tubes specified in 3A001(b)(1) and having all of the following: (L.N. 254 of 2008)

(a) Operating frequencies above 3 GHz;

(b) An average output power to mass ratio exceeding 80 W/kg; and (L.N. 226 of 2009; L.N. 45 of 2010)

Note:

3A001(b)(8) does not include equipment designed or rated for operation in any frequency band which is "allocated by the ITU" for radiocommunications services, but not for radio-determination. (L.N. 132 of 2001; L.N. 254 of 2008)

(9)    Microwave power modules (MPM) consisting of, at least, a travelling wave tube, a microwave "monolithic integrated circuit" and an integrated electronic power conditioner and having all of the following characteristics:

(a)    A 'turn-on time' from off to fully operational in less than 10 seconds;

(b)    A volume less than the maximum rated power in watts multiplied by 10 cm³/W;

(c)    An "instantaneous bandwidth" greater than 1 octave (f max > 2 f min) and having any of the following characteristics:

(1)    For frequencies equal to or less than 18 GHz, an RF output power greater than 100 W;

(2)    A frequency greater than 18 GHz;

Technical Notes:

1.      The 'turn-on time' in 3A001(b)(9)(a) refers to the time from fully-off to fully operational, i.e., it includes the warm-up time of the MPM.

2.      To calculate the volume in 3A001(b)(9)(b), the following example is provided: for a maximum rated power of 20 W, the volume would be: 20 W × 10 cm³/W = 200 cm³. (L.N. 254 of 2008)

(10) Oscillators or oscillator assemblies, designed to operate with all of the following:

(a)     A single sideband (SSB) phase noise, in dBc/Hz, better than -(126 + 20 log₁₀F - 20 log₁₀f) for 10 Hz < F < 10 kHz;

(b)     A single sideband (SSB) phase noise, in dBc/Hz, better than -(114 + 20 log₁₀F - 20 log₁₀f) for 10 kHz ≤ F < 500 kHz;

Technical Note:

In 3A001(b)(10), F is the offset from the operating frequency in Hz and f is the operating frequency in MHz. (L.N. 226 of 2009)

(11) "Frequency synthesiser" "electronic assemblies" having a "frequency switching time" from one selected frequency to another as specified by any of the following:

(a) Less than 312 ps;

(b) Less than 100 μs for any frequency change exceeding 1.6 GHz within the synthesised frequency range exceeding 3.2 GHz but not exceeding 10.6 GHz;

(c) Less than 250 μs for any frequency change exceeding 550 MHz within the synthesised frequency range exceeding 10.6 GHz but not exceeding 31.8 GHz;

(d) Less than 500 μs for any frequency change exceeding 550 MHz within the synthesised frequency range exceeding 31.8 GHz but not exceeding 43.5 GHz;

(e) Less than 1 ms within the synthesised frequency range exceeding 43.5 GHz;

N.B.:
For general purpose "signal analysers", signal generators, network analysers and microwave test receivers, see 3A002(c), 3A002(d), 3A002(e) and 3A002(f) respectively. (L.N. 45 of 2010)

(1) Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices, having any of the following: (L.N. 226 of 2009)

(a) A carrier frequency exceeding 6 GHz;

(b) A carrier frequency exceeding 1 GHz, but not exceeding 6 GHz, and having any of the following: (L.N. 254 of 2008)

(1) A 'frequency side-lobe rejection' exceeding 65 dB; (L.N. 226 of 2009)

(2) A product of the maximum delay time and the bandwidth (time in ms and bandwidth in MHz) of more than 100;

(3) A bandwidth greater than 250 MHz; or

(4) A dispersive delay of more than 10 ms; or

(1) A product of the maximum delay time and the bandwidth (time in ms and bandwidth in MHz) of more than 100;

(2) A dispersive delay of more than 10 ms; or

(3) A 'frequency side-lobe rejection' exceeding 65 dB and a bandwidth greater than 100 MHz; (L.N. 226 of 2009)

Technical Note:

The term 'frequency side-lobe rejection' means the maximum rejection value specified in data sheet. (L.N. 226 of 2009)

Note:

3A001(c) does not include acoustic wave devices that are limited to a single band pass, low pass, high pass or notch filtering, or resonating function. (L.N. 226 of 2009)

(2) Bulk (volume) acoustic wave devices which permit the direct processing of signals at frequencies exceeding 6 GHz; (L.N. 226 of 2009)

(3) Acoustic-optic "signal processing" devices employing interaction between acoustic waves (bulk wave or surface wave) and light waves which permit the direct processing of signals or images, including spectral analysis, correlation or convolution; (L.N. 254 of 2008)

(d) Electronic devices and circuits containing components, manufactured from "superconductive" materials specially designed for operation at temperatures below the "critical temperature" of at least one of the "superconductive" constituents, with any of the following:

(1) Current switching for digital circuits using "superconductive" gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10^-14 J; or

(2) Frequency selection at all frequencies using resonant circuits with Q-values exceeding 10000; (L.N. 132 of 2001)

(e)   High energy devices, as follows:

(1)    'Cells' as follows:

(a)    'Primary cells' having an 'energy density' exceeding 550 Wh/kg at 20^°C;

(b)    'Secondary cells' having an 'energy density' exceeding 250 Wh/kg at 20^°C;

Technical Notes:

1.      For the purpose of 3A001(e)(1), 'energy density' (Wh/kg) is calculated from the nominal voltage multiplied by the nominal capacity in ampere-hours (Ah) divided by the mass in kilograms. If the nominal capacity is not stated, energy density is calculated from the nominal voltage squared, then multiplied by the discharge duration in hours divided by the discharge load in ohms and the mass in kilograms.

2.      For the purpose of 3A001(e)(1), a 'cell' is an electrochemical device, which has positive and negative electrodes, an electrolyte, and is a source of electrical energy. It is the basic building block of a battery.

3.      For the purpose of 3A001(e)(1)(a), a 'primary cell' is a 'cell' that is not designed to be charged by any other source.

4.      For the purpose of 3A001(e)(1)(b), a 'secondary cell' is a 'cell' that is designed to be charged by an external electrical source.

Note:

3A001(e)(1) does not include single cell batteries or any other batteries. (L.N. 254 of 2008)

(2) High energy storage capacitors, as follows:

N.B.: